• DocumentCode
    1072570
  • Title

    P-type anode structure for GaAs TEDs on semi-insulating substrate

  • Author

    Kurumada, Katsuhiko ; Asai, Kazuyoshi ; Ishii, Yasunobu

  • Author_Institution
    Musashino Electrical Communication Laboratory, Tokyo, Japan
  • Volume
    1
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    167
  • Lastpage
    169
  • Abstract
    The use of a p-type anode in a planar GaAs Gunn device was studied for the first time. The undesirable decrease of current for dc bias, compared with pulsed bias, is eliminated by hole injection to the overcritically doped n-layer from a p-n junction anode. These devices have exhibited satisfactory Gunn domain operation for triggered dc operation.
  • Keywords
    Anodes; Buffer layers; Cathodes; Electrodes; Electron traps; Gallium arsenide; Gunn devices; Interface phenomena; P-n junctions; Space charge;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25275
  • Filename
    1481137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072570