• DocumentCode
    1072581
  • Title

    A new method to determine MOSFET channel length

  • Author

    Chern, John G J ; Chang, Peter ; Motta, Richard F. ; Godinho, Norm

  • Author_Institution
    Zilog Inc., Cupertino, California
  • Volume
    1
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    A new method is proposed to electrically determine MOS transistor channel length with both accuracy and convenience. Based on the linear region relationship between effective channel length Leffand channel resistance Rchanof an MOS transistor, this method determines Leffby applying relatively large but constant gate voltage to eliminate threshold voltage determination and takes into account external resistance. Comparison of this method with SEM measurement shows very good agreement (within ±0.1 µm resolution limit of our SEM technique).
  • Keywords
    Capacitance measurement; Conductivity measurement; Contact resistance; Electrical resistance measurement; Intrusion detection; Length measurement; MOSFET circuits; Scanning electron microscopy; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25276
  • Filename
    1481138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072581