MOVPE grown 1360-nm GaInNAs quantum-well laser with multibarrier structures

Author

Ki-Sung Kim ; Sung-Jin Lim ; Ki-Hong Kim ; Jae-Ryung Yoo ; Taek Kim ; Yong-Jo Park

Author_Institution

Photonics Lab., Samsung Adv. Inst. of Technol., Gyeonggi-Do, South Korea

Volume

16

Issue

9

fYear

2004

Firstpage

1994

Lastpage

1996

Abstract

We present a promising method to achieve a high-performance GaInNAs quantum-well (QW) laser emitting 1.36 μm by metal-organic vapor phase epitaxy. It was found that the insertion of GaNAs-InGaAs layers to GaInNAs QW-GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. As the thickness of the GaNAs and InGaAs layers was decreased, the wavelength emitted from QW became longer. The optical efficiencies of the proposed QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360-nm laser diode are measured to be 892 A/cm² and 0.135 W/A, respectively.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1360 nm; GaInNAs quantum well laser; InGaAs-GaNAs; MOVPE; edge-emitting laser; laser diode; lasing performance; metal-organic vapor phase epitaxy; multibarrier structures; Density measurement; Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical control; Quantum well lasers; Stimulated emission; Thickness control; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.831953

Filename

1325210