• DocumentCode
    1072800
  • Title

    P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices

  • Author

    Shen, Chen ; Pu, Jing ; Li, Ming-Fu ; Cho, Byung Jin

  • Author_Institution
    Nat. Univ. of Singapore
  • Volume
    54
  • Issue
    8
  • fYear
    2007
  • Firstpage
    1910
  • Lastpage
    1917
  • Abstract
    A flash memory with a lightly doped p-type floating gate is proposed, which improves charge retention and programming/erase (P/E) Vth window. Improvement in P/E window is enhanced for cells with smaller capacitance coupling ratio, which is important for future scaled flash memory cells. Both device simulation and experimental verification are presented.
  • Keywords
    field effect memory circuits; flash memories; capacitance coupling ratio; charge retention; flash memory devices; p-type floating gate; programming-erase window; Capacitance; Chromium; Electrons; Flash memory; Flash memory cells; Nonvolatile memory; PROM; Physics; Senior members; Space technology; Coupling ratio (CR); Flash memory; electrically erasable programmable read-only memory (EEPROM); floating gate; p-type; retention;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.900680
  • Filename
    4277980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072800