DocumentCode
1073299
Title
GaAs FET large-signal model and its application to circuit designs
Author
Tajima, Yusuke ; Wrona, Beverly ; Mishima, Katsuhiko
Author_Institution
Raytheon Research Division, Waltham, MA
Volume
28
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
171
Lastpage
175
Abstract
A large-signal GaAs FET model is derived based on dc characteristics of the device. Analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large-signal model is demonstrated.
Keywords
Circuit synthesis; Distortion measurement; Equivalent circuits; FETs; Frequency; Gallium arsenide; Oscillators; Power amplifiers; Scattering parameters; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20306
Filename
1481458
Link To Document