Equivalent circuit of Gunn devices operating in the monostable switching mode

An equivalent circuit describing the switching properties of highly doped Gunn devices is deduced from detailed partial differential computer simulations. The circuit elements can be derived from device measurements or stationary calculations. Transients of devices with arbitrary external circuits are calculated by ordinary differential equations. The resulting switching time, current amplitude, and relaxation processes are in good agreement with the partial differential computer simulations and with experimental data.