• DocumentCode
    1073577
  • Title

    In1-xGaxAsyP1-y/InP DH lasers fabricated on InP

  • Author

    Yamamoto, Takaya ; Sakai, Kazuo ; Akiba, Shigeyuki ; Suematsu, Yasuharu ; Suematsu, Yasuharu

  • Author_Institution
    KDD Research and Development Laboratories, Tokyo, Japan
  • Volume
    14
  • Issue
    2
  • fYear
    1978
  • fDate
    2/1/1978 12:00:00 AM
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    In1-xGaxAsyP1-y/InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35\\mu m at room temperature were fabricated on
  • Keywords
    DH-HEMTs; Diode lasers; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Substrates; Surface emitting lasers; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1978.1069753
  • Filename
    1069753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073577