• DocumentCode
    1073644
  • Title

    1/f noise in (BaSr) TiO3(barrier-dominated contact noise)

  • Author

    Ambrózy, A.

  • Author_Institution
    Technical University of Budapest, Budapest, Hungary
  • Volume
    28
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    Contrary to other semiconductors, the doped barium-strontium titanate shows a region with quite high positive temperature coefficient of resistivity. It is caused by potential barriers whose height depends on temperature via the temperature dependence of permittivity. A new model has been developed for calculating the fluctuation of total resistance considering the particular properties of the barrier. The model is compared to others in which constriction or a poor-conducting uniform layer determines the resistance.
  • Keywords
    Amorphous materials; Conductivity; Glass; Optical films; Semiconductor materials; Silicon; Strontium; Temperature dependence; Threshold current; Titanium compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20339
  • Filename
    1481491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073644