DocumentCode
1073673
Title
Electromigration in sputtered aluminum films
Author
Schreiber, H.U. ; Grabe, B.
Author_Institution
Ruhr-Universität Bochum, Bochum, Germany
Volume
28
Issue
3
fYear
1981
fDate
3/1/1981 12:00:00 AM
Firstpage
351
Lastpage
353
Abstract
The electromigration behavior of sputtered aluminum films is discussed. Direct measurement of the aluminum drift velocity yielded a grain boundary activation energy of about 0.43 to 0.46 eV in the temperature range between 140 and 280°C. Time to failure and reliability were also tested and compared with electron-beam-evaporated aluminum, indicating a good quality for the sputtered films if sputter conditions are properly chosen.
Keywords
Aluminum; Argon; Electromigration; Integrated circuit metallization; Integrated circuit reliability; Rough surfaces; Sputtering; Substrates; Surface roughness; Titanium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20342
Filename
1481494
Link To Document