• DocumentCode
    1073714
  • Title

    Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED´s

  • Author

    Goodfellow, Robert C. ; Carter, Andrew C. ; Rees, Graham J. ; Davis, Richard

  • Author_Institution
    Plessey Research (Caswell) Limited, Northants, England
  • Volume
    28
  • Issue
    4
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    365
  • Lastpage
    371
  • Abstract
    The radiance/current relationship for small-area surface emitting LED´s has been found to saturate at high current densities between 30 and 1000 kA/cm2in the various GaAlAs and GaInAsP devices investigated. An important saturation mechanism is found to be due to superluminescence in the plane of the active layer. Auger recombination and carrier leakage from the active region are generally of secondary importance in causing the saturation.
  • Keywords
    Current density; Gallium arsenide; Indium phosphide; Lenses; Microoptics; Optical fiber devices; Optical materials; Optical surface waves; Predictive models; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20347
  • Filename
    1481499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073714