High brightness GaAlAs heterojunction red LED´s

GaAlAs single heterojunctions are shown to be very efficient red light-emitting diodes (LED´s). The high electron injection efficiency, high luminescence internal quantum efficiency (excellent material electronic quality), and low absorption lead to a high external quantum efficiency of electroluminescence (1 percent at 650 nm for uncoated devices). The absence of saturation of the brightness at high current densities allows the use of these GaAlAs LED´s at high current pulses (for displays, screens) as well as at low CW current (low power consumption LED´s).