• DocumentCode
    1073815
  • Title

    Degradation induced formation of extended defects in GaP:N LED´s

  • Author

    Ferenczi, George

  • Author_Institution
    Hungarian Academy of Sciences, Budapest, Ujpest, Hungary
  • Volume
    28
  • Issue
    4
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    421
  • Lastpage
    424
  • Abstract
    The light output degradation of commercial VPE GaP:N LED´s was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T6. T6is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level.
  • Keywords
    Charge carrier lifetime; Current density; Degradation; Diodes; Helium; Liquid crystals; Monitoring; Performance evaluation; Radiative recombination; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20358
  • Filename
    1481510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073815