Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide

Author

Sheppard, S.T. ; Melloch, M.R. ; Cooper, J.A., Jr.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

17

Issue

1

fYear

1996

Firstpage

4

Lastpage

6

Abstract

Fundamental operation of the first buried-channel charge-coupled device (BCCD) in 6H-SiC is presented. The n-type buried-channel was formed by ion implantation of nitrogen, and a double level overlapping-polysilicon-gate process was adapted to the SiC MOS system. An electron mobility of 200 cm/sup 2//Vs was measured in the channel, which is doped 1.6/spl times/10/sup 17/ cm/sup -3/. An eight-stage, four-phase BCCD shift register was operated in the pseudo-two-phase configuration at room temperature. At 5.5 kHz, the charge transfer efficiency is greater than 99.4%.

Keywords

carrier mobility; charge-coupled device circuits; charge-coupled devices; ion implantation; semiconductor materials; shift registers; silicon compounds; 5.5 kHz; 99.4 percent; CCD image sensors; MOS system; SiC; buried-channel charge-coupled device; charge transfer efficiency; double level overlapping-polysilicon-gate process; electron mobility; four-phase BCCD shift register; ion implantation; n-type buried channel; pseudo-two-phase configuration; Charge-coupled image sensors; Electron mobility; Etching; Implants; Nitrogen; Oxidation; Photonic band gap; Semiconductor materials; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475559

Filename

475559