Degradation Analysis of InP Buried Heterostructure Layers in Lasers Using Optical-Beam-Induced-Current Technique

Author

Takeshita, Tatsuya ; Sato, Tomonari ; Mitsuhara, Manabu ; Kondo, Yasuhiro ; Oohashi, Hiromi

Author_Institution

Photonics Labs., NTT Corp., Atsugi, Japan

Volume

10

Issue

1

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

142

Lastpage

148

Abstract

The degradation of InP buried heterostructure layers in lasers during constant-power aging is investigated by using the optical-beam-induced-current (OBIC) technique. An increase in OBIC intensity after aging is detected in the InP layer, and it is shown that the carrier concentration around the p-type InP buried layer of the mesa sidewall is decreased by aging. This technique is useful for detecting changes in the carrier concentration in InP areas of several micrometers in lasers by using an incident light absorbed in an InP layer.

Keywords

III-V semiconductors; OBIC; ageing; carrier density; indium compounds; semiconductor lasers; InP; OBIC intensity; OBIC technique; buried heterostructure layers lasers; carrier concentration; constant-power aging; degradation analysis; incident light absorbed; mesa sidewall; optical-beam-induced-current technique; p-type buried layer; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum-well lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2009.2025490

Filename

5075551