• DocumentCode
    1075246
  • Title

    GaAs MIS solar cells with evaporated tin oxide interfacial layers

  • Author

    Brinker, D.J. ; Wang, E.Y.

  • Author_Institution
    Arizona State University, Tempe, AZ
  • Volume
    28
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    1097
  • Lastpage
    1098
  • Abstract
    GaAs metal-insulator-semiconductor (MIS) solar cells with vacuum-deposited tin oxide interfacial layers have been investigated. Open-circuit voltages of 0.765 V were observed, 62 percent higher than those of cells made without the tin oxide layer. The dependence of open-circuit voltage on interfacial layer thickness indicated a peak at 20-Å width. The results suggest that VOCcould be further improved by reduction of pinhole area in the interfacial layer.
  • Keywords
    Boats; Electron beams; Fabrication; Gallium arsenide; Heterojunctions; Metal-insulator structures; Photovoltaic cells; Photovoltaic systems; Tin; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20492
  • Filename
    1481644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075246