• DocumentCode
    1075444
  • Title

    Degradation of refresh time in dynamic MOS RAM by irradiation of alpha particles

  • Author

    Yoshihara, Tsutomu ; Takano, Satoshi ; Kimata, Masafumi ; Nakano, Takao

  • Author_Institution
    Mitsubishi Electric Corporation, Hyogo, Japan
  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1198
  • Lastpage
    1199
  • Abstract
    Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8.89 × 10-5pA/alpha.
  • Keywords
    Alpha particles; Capacitance; Capacitors; Current density; Degradation; Electrons; Packaging; Particle measurements; Read-write memory; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20511
  • Filename
    1481663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075444