• DocumentCode
    1075607
  • Title

    Thermal stability of magnetic tunnel junctions with FeOx doped tunnel barrier

  • Author

    Kim, Sun Ja ; Kim, Sun Ja ; Im, D.H. ; Kim, Choong Ki ; Yoon, Chang Soo

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • fDate
    7/1/2004 12:00:00 AM
  • Firstpage
    2284
  • Lastpage
    2286
  • Abstract
    Magnetic tunnel junctions were fabricated with tunnel barriers that had a thin film of Fe(0-8 Å thick) inserted in the middle to study the effect of FeOx doping on the magneto-electron transport properties of the junction. Tunneling magnetoresistance (TMR) ratio of 24% was realized with the tunnel junction with a 2 Å-thick Fe interlayer, whereas the junction without doping did not exhibit the TMR effect. The FeOx doping also considerably improved the thermal stability of the junction, retaining the TMR ratio of 15% at 350°C.
  • Keywords
    doping profiles; magnetic multilayers; magnetic thin films; magnetic tunnelling; thermal stability; tunnelling magnetoresistance; 350 C; FeO; TMR ratio; barrier doping; magnetic tunnel junctions; magnetoelectron transport properties; thermal stability; thin film; tunnel barrier; tunneling magnetoresistance; Annealing; Doping; Iron; Magnetic properties; Magnetic tunneling; Plasma measurements; Plasma temperature; Thermal stability; Transistors; Tunneling magnetoresistance; Barrier doping; MTJ; magnetic tunnel junction; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2004.830443
  • Filename
    1325479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075607