Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents

Author

Somos, Istvan L. ; Piccone, Dante E. ; Willinger, Lawrence J. ; Tobin, William H.

Author_Institution

Gen. Electr. Co., Malvern, PA, USA

Volume

31

Issue

6

fYear

1995

Firstpage

1221

Lastpage

1226

Abstract

Solid-state switches are being designed for use on AC transmission lines for tighter control of power flow and increased use of transmission capacity in accordance with an advanced concept called “Flexible AC Transmission System” (FACTS). These necessitate using the largest available thyristors and GTOs that must perform under emergency fault conditions with assurance of long term reliability and life expectancy. This paper is concerned with reviewing concepts needed to predict on-state losses incurred at extreme variations of junction temperature and describing an empirical method being used for commercially available 100 mm thyristors

Keywords

fault currents; flexible AC transmission systems; load flow; load regulation; losses; power semiconductor switches; power system control; thyristor applications; 100 mm; AC transmission lines; FACTS; Flexible AC Transmission System; GTO; emergency fault conditions; junction temperature; life expectancy; long term reliability; multicycle fault currents; on-state characteristic prediction; on-state losses prediction; power flow control; power semiconductors; solid-state switches; temperature rise prediction; thyristors; Control systems; Fault currents; Heating; Industry Applications Society; Isothermal processes; Plasma temperature; Temperature dependence; Testing; Thyristors; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.475691

Filename

475691