• DocumentCode
    1075864
  • Title

    Switching reliability improvement of phase change memory with nanoscale damascene structure by Ge2Sb2Te5 CMP process

  • Author

    Zhong, M. ; Song, Z.T. ; Liu, B. ; Wang, L.Y. ; Feng, S.L.

  • Author_Institution
    Chinese Acad. of Sci., Shanghai
  • Volume
    44
  • Issue
    4
  • fYear
    2008
  • Firstpage
    322
  • Lastpage
    323
  • Abstract
    Phase change memory with nanoscale damascene structure was successfully fabricated by Ge2Sb2Te5 (GST) film chemical mechanical polishing (CMP) process. An ultra-smooth surface reduced the GST/TiN contact resistance, and more homogeneous GST material composition distribution caused by the damascene structure made GST sheet resistance steady. Thus, switching reliability of the device was improved greatly compared with that of the device without CMP process owing to the reduction of device resistance fluctuation.
  • Keywords
    antimony compounds; chemical mechanical polishing; germanium compounds; phase change materials; tellurium compounds; Ge2Sb2Te5; chemical mechanical polishing; damascene structure; device resistance fluctuation; material composition distribution; nanoscale damascene structure; phase change memory; sheet resistance; switching reliability improvement; ultrasmooth surface;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082906
  • Filename
    4455435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075864