• DocumentCode
    1076895
  • Title

    Delayed secondary avalanche effects in millimeter wave GaAs IMPATT diodes

  • Author

    Thoren, G.R. ; Dalman, G.C. ; Lee, C.A.

  • Author_Institution
    Cornell University, Ithaca, NY, USA
  • Volume
    2
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    13
  • Abstract
    A simulation of the large signal operation of GaAs millimeter wave IMPATTs shows that a high peak current density of electrons (often in excess of 25KA/cm2) will lead to a delayed secondary avalanche (DSA) in the drift zone. These DSA effects have been simulated and correlated with experimental observations and are a determining factor in achieving high power and high efficiency in GaAs IMPATTs at 40 GHz and above.
  • Keywords
    Charge carrier processes; Computer simulation; Delay effects; Diodes; Doping profiles; Electrons; Gallium arsenide; Poisson equations; Propagation delay; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25321
  • Filename
    1481805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076895