• DocumentCode
    1076989
  • Title

    Degradation of GaAs MESFETS in 18 megohm-cm H2O

  • Author

    Weitzel, C.E. ; Miers, T.H.

  • Author_Institution
    Semiconductor Research and Development Laboratories, Motorola, Inc., Phoenix, Arizona
  • Volume
    2
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    Rinsing GaAs MESFETs under illumination in 18 megohm-cm H2O is shown to rapidly degrade the dc characteristics of the device. H2O etches a trough around the Schottky barrier gate electrode with an etch rate of at least 22 Å/min. Formation of the trough significantly increases the parasitic resistances of the MESFET.
  • Keywords
    Degradation; Electrodes; Etching; Gallium arsenide; Lighting; MESFETs; Metallization; Noise figure; Schottky barriers; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25331
  • Filename
    1481815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076989