Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

Author

Liaw, Chorng-Wei ; Yeh, Leaf ; Lin, Ming-Jang ; Lin, Chrong Jung

Author_Institution

Nat. Tsing Hua Univ., Hsinchu

Volume

28

Issue

8

fYear

2007

Firstpage

737

Lastpage

739

Abstract

In this letter, a novel type of high-voltage n-channel junction field-effect transistor (JFET) was designed using a conventional n-channel laterally diffused metal-oxide-semiconductor (n-LDMOS) without changing any step in the process. High-voltage JFET can be a start-up device in power factor correction, dc-ac converters, and ac-dc converters for providing a self-powered circuit and minimizing standby power losses without gate control because of its negative threshold voltage. Experimental results show that an n-LDMOS with this JFET structure can achieve a reverse blocking voltage of more than 700 V with very low leakage current. The pinch-off voltage can be designed by changing n-well width to meet the circuit requirement.

Keywords

AC-DC power convertors; DC-AC power convertors; MOSFET; junction gate field effect transistors; power factor correction; JFET; ac-dc converters; dc-ac converters; high-voltage junction field-effect transistor; n-channel laterally diffused metal-oxide-semiconductor; power factor correction; power losses; reverse blocking voltage; self-powered circuit; CMOS technology; FETs; JFET circuits; Leakage current; Power factor correction; Regulators; Resistors; Switching converters; Threshold voltage; Voltage control; $V_{rm TH}$ adjustable; Junction field-effect transistor (JFET); n-channel laterally diffused metal–oxide–semiconductor (n-LDMOS); power devices; start-up;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.900869

Filename

4278367