DocumentCode
1077204
Title
On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors
Author
Darken, L.
Author_Institution
Oxford Instrum., Oak Ridge, TN
Volume
41
Issue
1
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
394
Lastpage
395
Abstract
The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood
Keywords
carrier density; defect electron energy states; dislocation etching; electron traps; elemental semiconductors; germanium; measurement standards; semiconductor counters; Ge; Ge crystals; capacitance transient techniques; carrier type; crystallography; etching; high-purity; measurement standard; net carrier concentration; radiation detectors; semiconductor; trapping levels; van der Pauw method; ANSI standards; Capacitance measurement; Crystallography; Crystals; Etching; Germanium; Measurement standards; Nuclear Instruments - n42; Radiation detectors; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.281529
Filename
281529
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