• DocumentCode
    1077204
  • Title

    On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

  • Author

    Darken, L.

  • Author_Institution
    Oxford Instrum., Oak Ridge, TN
  • Volume
    41
  • Issue
    1
  • fYear
    1994
  • fDate
    2/1/1994 12:00:00 AM
  • Firstpage
    394
  • Lastpage
    395
  • Abstract
    The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood
  • Keywords
    carrier density; defect electron energy states; dislocation etching; electron traps; elemental semiconductors; germanium; measurement standards; semiconductor counters; Ge; Ge crystals; capacitance transient techniques; carrier type; crystallography; etching; high-purity; measurement standard; net carrier concentration; radiation detectors; semiconductor; trapping levels; van der Pauw method; ANSI standards; Capacitance measurement; Crystallography; Crystals; Etching; Germanium; Measurement standards; Nuclear Instruments - n42; Radiation detectors; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.281529
  • Filename
    281529