• DocumentCode
    1077450
  • Title

    GaAs FETs having high output power per unit gate width

  • Author

    Macksey, H.M. ; Doerbeck, F.H.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    2
  • Issue
    6
  • fYear
    1981
  • fDate
    6/1/1981 12:00:00 AM
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.
  • Keywords
    Doping; Frequency; Gain; Gallium arsenide; Indium phosphide; Laboratories; Microwave FETs; Power generation; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25376
  • Filename
    1481860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077450