• DocumentCode
    1077576
  • Title

    Pulsed ionizing radiation recovery characteristics of MSI GaAs integrated circuits

  • Author

    Long, S.I. ; Lee, F.S. ; Pellegrini, P.

  • Author_Institution
    Rockwell International Microelectronics Research and Development Center, Thousand Oaks, CA
  • Volume
    2
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    GaAs Schottky Diode FET Logic Divide-by 8 circuits have been characterized for transient response when exposed to 20 ns FXR pulses at 25°C. A logic upset threshold of about 108rad/s was observed. At dose rates of 2 × 1010rads/s, functional operation was restored in 5 µs. A discussion of logic upset mechanisms is presented, attempting to explain both short and long term recovery observations.
  • Keywords
    Circuit testing; FETs; Flip-flops; Gallium arsenide; Ionizing radiation; Logic circuits; Logic gates; Pulse circuits; Pulse measurements; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25388
  • Filename
    1481872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077576