• DocumentCode
    1077891
  • Title

    2.3 μm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W

  • Author

    Donetsky, D. ; Kipshidze, G. ; Shterengas, L. ; Hosoda, T. ; Belenky, G.

  • Author_Institution
    SUNY at Stony Brook, Stony Brook
  • Volume
    43
  • Issue
    15
  • fYear
    2007
  • Firstpage
    810
  • Lastpage
    811
  • Abstract
    Improvement of the output parameters of 2.3 mum GaSb-based laser diodes was observed with increase of the quantum-well compressive strain. A continuous-wave (CW) power of 1.15 W and quasi-CW power of 1.4 W were obtained at room temperature from 2 mm-long single emitters with a 100 mum-aperture.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; GaInAsSb-AlGaAsSb-GaSb; continuous-wave power; power 1.4 W; quantum well laser diodes; quantum-well compressive strain; quasi-CW output power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071320
  • Filename
    4278449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077891