Computer modeling of diode forward recovery characteristics

Ebers-Moll based computer models for diodes cannot accurately represent forward recovery characteristics. This occurs because the model is basically a modified RC network, while the forward recovery behavior is essentially inductive. The situation may be corrected using an Ebers-Moll modeled transistor, which shunts a resistor in series with the diode. The transistor is initially off, so there is a large voltage drop across the resistor. When the transistor turns on, the voltage drop is limited by the saturation voltage of the transistor. When properly modeled, excellent agreement with experimental data was found, and no detrimental effects on other simulated diode characteristics resulted.