• DocumentCode
    1079805
  • Title

    The DC current—Voltage characteristics of diodes under high-injection conditions

  • Author

    Mertens, Robert P. ; Nijs, Johan F. ; Van Overstraeten, Roger J. ; Jain, S.C.

  • Author_Institution
    Katholieke Universiteit Leuven, Heverlee, Belgium
  • Volume
    29
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    922
  • Lastpage
    928
  • Abstract
    The (J-V) characteristics of n+-p-p+diodes operating under high injection are calculated using a simplified analysis which is in very good agreement with an exact numerical calculation. The analysis is restricted to the case of negligible recombination in the lowly doped base. It is demonstrated that at high injection the commonly used approximation J = J_{s} \\exp (V/2V_{t}) is not valid if the current results from both electron and hole flow.
  • Keywords
    Charge carrier processes; Current-voltage characteristics; Doping profiles; Employee welfare; Helium; Nonlinear equations; P-i-n diodes; Quasi-doping; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20801
  • Filename
    1482298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1079805