Performance improvement of MOSFET lasers by using trapezoidal gate MOSFETs

Author

El-Hennawy, A. ; Al-Ghamdi, A.

Author_Institution

Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia

Volume

141

Issue

2

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

69

Lastpage

72

Abstract

A new technique to increase the output power level of laser MOSFETs (~0.1 mW) and to improve their performance (e.g. better efficiency, faster response). This technique uses a trapezoidal gate TG-MOSFET instead of the traditional rectangular gate device to pump carriers (electrons and holes) into its floating gate which acts as an optical resonant cavity besides being the active region where electrons and holes recombine radiatively and result, consequently, in the laser output. The paper comprises a detailed study and characterisation of the developed laser MOSFET, from which it is revealed that it is easier to monitor, simpler to realise and less expensive

Keywords

carrier mobility; electron-hole recombination; insulated gate field effect transistors; laser cavity resonators; semiconductor lasers; 0.1 mW; MOSFET lasers; TG-MOSFET; active region; carrier pumping; efficiency; electrons; expensive; faster response; floating gate; holes; laser MOSFETs; laser output; optical resonant cavity; output power level; performance improvement; radiative electron/hole recombination; trapezoidal gate MOSFETs;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19949813

Filename

282621