DocumentCode
1080436
Title
Scaling, small numbers and randomness in semiconductors
Author
Keyes, Robert W.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
10
Issue
3
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
28
Lastpage
31
Abstract
The randomness in the distribution of dopant atoms in semiconductors becomes increasingly important as devices are miniaturized and voltages are reduced. Fluctuations in the distribution have serious effects on noise margins in advanced devices and constitute a limit to the size of transistors built with present fabrication methods. In this article, the author explores ways to avoid those limits.<>
Keywords
doping profiles; epitaxial growth; impurity distribution; integrated circuit technology; semiconductor growth; device scaling; dopant atoms distribution; fabrication methods; noise margins; random distribution; semiconductors; transistor size limitations; Atomic layer deposition; Doping; Fabrication; Fluctuations; Semiconductor device manufacture; Semiconductor device noise; Semiconductor devices; Surface treatment; Transistors; Voltage;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.283654
Filename
283654
Link To Document