• DocumentCode
    1080688
  • Title

    GaAs integrated optoelectronics

  • Author

    Bar-Chaim, Nadav ; Margalit, Shlomo ; Yariv, Amnon ; Ury, Israel

  • Volume
    29
  • Issue
    9
  • fYear
    1982
  • fDate
    9/1/1982 12:00:00 AM
  • Firstpage
    1372
  • Lastpage
    1381
  • Abstract
    Monolithic integrated optoelectronic circuits, which incorporate electronic and optical devices on the same substrate, have the advantages of smaller size, and potentially higher reliability compared with conventional hybrid circuits. In addition, significant improvements in the speed and noise performance of communication systems can be realized. This paper reviews the various elements which constitute the integrated optoelectronic circuits (IOEC´s) with emphasis on the structure of GaAlAs injection lasers. Several integrated circuits on GaAs substrates are described in detail. A view of optoelectronic circuits in other III-V compounds is presented.
  • Keywords
    Circuits; Gallium arsenide; Integrated optoelectronics; Laser noise; Optical devices; Optical fiber communication; Optical receivers; Optical transmitters; Stimulated emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20885
  • Filename
    1482382