DocumentCode
108072
Title
Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
Author
Santi, Enrico ; Kang Peng ; Mantooth, Homer Alan ; Hudgins, Jerry L.
Author_Institution
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
434
Lastpage
442
Abstract
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.
Keywords
III-V semiconductors; gallium compounds; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; GaN; MOSFETs; SiC; gallium nitride devices; silicon carbide power diodes; wide-bandgap power semiconductor device; Gallium nitride; Insulated gate bipolar transistors; JFETs; Logic gates; Mathematical model; Numerical models; Silicon carbide; Gallium nitride (GaN); modeling; power device modeling; power semiconductor devices; silicon carbide (SiC); wide-bandgap; wide-bandgap.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2373373
Filename
6996033
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