• DocumentCode
    1080774
  • Title

    Linear k term valence subband mixing and its effect on electroabsorption of tensile-strained GaAs/AlGaAs quantum wells

  • Author

    Xue, Deng-ping ; Bardyszewski, Witold ; Yevick, David

  • Author_Institution
    Dept. of Electr. Eng., Queen´´s Univ., Kingston, Ont., Canada
  • Volume
    30
  • Issue
    2
  • fYear
    1994
  • fDate
    2/1/1994 12:00:00 AM
  • Firstpage
    446
  • Lastpage
    451
  • Abstract
    We have examined the contribution of a linear k term in the Luttinger Hamiltonian to electroabsorption of strained quantum wells. We have solved the 4×4 effective mass equation for the two lowest valence subbands and an appropriate set of differential equations for excitons. For bound excitons, our results indicate that the hh1→c1 transition is not forbidden for z-polarized electromagnetic waves, that the absorption spectrum can be independent of polarization, and that the hh1 and lh1 absorption edges, contrary to recent suggestion, cannot merge
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; semiconductor quantum wells; valence bands; 4×4 effective mass equation; GaAs-AlGaAs; Luttinger Hamiltonian; absorption spectrum; bound excitons; differential equations; electroabsorption; hh1 absorption edges; hh1→c1 transition; lh1 absorption edges; linear k term valence subband mixing; tensile-strained GaAs/AlGaAs quantum wells; z-polarized electromagnetic waves; Differential equations; Effective mass; Eigenvalues and eigenfunctions; Electromagnetic scattering; Electromagnetic wave absorption; Electromagnetic wave polarization; Excitons; Gallium arsenide; Helium; Optoelectronic devices;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.283792
  • Filename
    283792