Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation

Author

Fukuda, Mitsuo ; Okayasu, Masanobu ; Temmyo, Jiro ; Nakand, J.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

471

Lastpage

476

Abstract

The degradation behavior of 0.98-μm strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of the interface between the laser material (facet) and the antireflecting (AR) coating film. This phenomenon is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low optical output power in lasers without facet coating films. Throughout the clarification of those phenomena, the main reliability problem in 0.98-μm strained QW lasers under high output power operation is clarified

Keywords

III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical films; reliability; semiconductor lasers; 0.98 mum; InGaAs-AlGaAs; InGaAs/AlGaAs lasers; QW; antireflecting coating film; degradation behavior; facet coating films; facet oxidation; high output power operation; high rate; high-power operation; high-power operations; instantaneous catastrophic optical damage; laser material; relatively low optical output power; reliability problem; strained quantum well; Coatings; Degradation; Fiber lasers; Indium gallium arsenide; Laser noise; Optical films; Optical materials; Oxidation; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283796

Filename

283796