• DocumentCode
    1080845
  • Title

    Fabrication of an optical directional coupler of CdTe by electron beam lithography and ion etching

  • Author

    Nishimura, Tadashi ; Aritome, Hiroaki ; Namba, Susumu

  • Author_Institution
    LSI Lab., Mitsubishi Electric Corp., Hyogo, Japan
  • Volume
    16
  • Issue
    12
  • fYear
    1980
  • fDate
    12/1/1980 12:00:00 AM
  • Firstpage
    1337
  • Lastpage
    1340
  • Abstract
    Various kinds of high resolution techniques such as ion etching, chemical etching, ion implantation, and electron beam lithography are studied for fabricating CdTe optical integrated circuits. It is found that the ion-etching rate of CdTe is high and has only a small dependence on crystal orientation. A special chemical etching solution for aluminum on CdTe that does not corrode CdTe and proton implanted CdTe is used for high resolution patterning of CdTe. The smooth patterns in PMMA resist produced by an electron beam exposure is replicated deep into 2.5 μm of CdTe face through the aluminum layer. Rib guides and a rib-type optical directional coupler are fabricated from planar guides by using proton implantation which makes refractive index change on CdTe face. The two-dimensional optical confinement is observed. A coupling coefficient of k \\simeq 0.39 mm-1is observed in the rib-type optical directional coupler.
  • Keywords
    Cadmium materials/devices; Optical directional couplers; Optical strip waveguide couplers; Chemicals; Directional couplers; Electron beams; Electron optics; Etching; Lithography; Optical device fabrication; Optical refraction; Optical variables control; Particle beam optics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070419
  • Filename
    1070419