DocumentCode
1080845
Title
Fabrication of an optical directional coupler of CdTe by electron beam lithography and ion etching
Author
Nishimura, Tadashi ; Aritome, Hiroaki ; Namba, Susumu
Author_Institution
LSI Lab., Mitsubishi Electric Corp., Hyogo, Japan
Volume
16
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
1337
Lastpage
1340
Abstract
Various kinds of high resolution techniques such as ion etching, chemical etching, ion implantation, and electron beam lithography are studied for fabricating CdTe optical integrated circuits. It is found that the ion-etching rate of CdTe is high and has only a small dependence on crystal orientation. A special chemical etching solution for aluminum on CdTe that does not corrode CdTe and proton implanted CdTe is used for high resolution patterning of CdTe. The smooth patterns in PMMA resist produced by an electron beam exposure is replicated deep into 2.5 μm of CdTe face through the aluminum layer. Rib guides and a rib-type optical directional coupler are fabricated from planar guides by using proton implantation which makes refractive index change on CdTe face. The two-dimensional optical confinement is observed. A coupling coefficient of
mm-1is observed in the rib-type optical directional coupler.
mm-1is observed in the rib-type optical directional coupler.Keywords
Cadmium materials/devices; Optical directional couplers; Optical strip waveguide couplers; Chemicals; Directional couplers; Electron beams; Electron optics; Etching; Lithography; Optical device fabrication; Optical refraction; Optical variables control; Particle beam optics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070419
Filename
1070419
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