MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers

Author

Yamamoto, Norio ; Yamamoto, Mitsuo ; Nakano, Junichi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

554

Lastpage

561

Abstract

Device-quality strained InAsP/InGaAsP multiple-quantum-well (MQW) structures are successfully grown using the low-pressure metalorganic vapor phase epitaxy method. The grown MQW structures are characterized using X-ray, photoluminescence, and photocurrent measurements that confirm that their structural and optical qualities are high enough for practical device applications, as well as that the InAsP/InGaAsP heterostructures have a large conduction-band offset. The grown wafers are processed into 40-μm-wide stripe-ridge waveguide lasers. Threshold current densities as low as 88 A/cm² are achieved for a graded-index separate-confinement heterostructure (GRIN-SCH) single-quantum-well laser diode. Buried heterostructure laser diodes fabricated from GRIN-SCH 4-well strained MQW wafers have threshold currents as low as 1.05 mA at 26°C and 7.2 mA at 106°C

Keywords

III-V semiconductors; X-ray diffraction examination of materials; conduction bands; gallium arsenide; gradient index optics; indium compounds; photoconductivity; photoluminescence; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.05 mA; 1.3 micron; 106 C; 26 C; 40 micron; 7.2 mA; GRIN-SCH single-quantum-well laser diode; InAsP-InGaAsP; MOVPE growth; X-ray measurements; buried heterostructure laser diodes; conduction-band offset; heterostructures; low-pressure metalorganic vapor phase epitaxy; multiple-quantum-well; optical qualities; photocurrent; photoluminescence; strained InAsP/InGaAsP quantum-well; stripe-ridge waveguide lasers; structural qualities; threshold current densities; Diode lasers; Epitaxial growth; Epitaxial layers; Optical devices; Optical waveguides; Photoconductivity; Photoluminescence; Quantum well devices; Quantum wells; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283802

Filename

283802