DocumentCode

1081590

Title

IIIB-8 gigaohm-range polycrystalline silicon load elements for a CMOS 16K static RAM

Author

Mahan, J.E.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1680

Lastpage

1680

Keywords

Circuits; Electron devices; Glass; Microelectronics; Random access memory; Read-write memory; Silicon; Thin film transistors; Voltage; Wafer bonding;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20967

Filename

1482464