• DocumentCode
    1081682
  • Title

    Triggerable semiconductor lasers

  • Author

    Copeland, J.A. ; Abbott, S.M. ; Holden, W.S.

  • Author_Institution
    Crawford Hill Laboratory, Bell Laboratories, Holmdel, NJ, USA
  • Volume
    16
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    388
  • Lastpage
    390
  • Abstract
    A triggerable semiconductor laser emits light in very short (0.1 ns) intense (0.1 W) pulses with a few nanosecond periods when biased a fraction of a milliampere above a threshold current. Single uniform lightwave pulses can be triggered by fractional milliampere current pulses up to several nanoseconds in duration. This behavior was first seen in computer simulations of devices with a high electron-trap density (other causes are possible). Devices exhibiting this behavior have been found among the population of AlGaAs stripe lasers made by deep proton bombardment. A simple lightwave pulse regenerator has been built by adding a photodiode with less than unity gain. This circuit emits lightwave pulses with 6 pJ energy, less than 0.2 ns in duration, and with an amplitude that is up to 15 times larger than the input pulse.
  • Keywords
    Gallium materials/lasers; Optical pulse generation; Photodiodes; Piezoelectric transducers; Pulsed lasers; Cathodes; Charge carrier processes; Electron traps; Helium; Laser transitions; Optical pulses; Pulse amplifiers; Pump lasers; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070497
  • Filename
    1070497