DocumentCode
1081682
Title
Triggerable semiconductor lasers
Author
Copeland, J.A. ; Abbott, S.M. ; Holden, W.S.
Author_Institution
Crawford Hill Laboratory, Bell Laboratories, Holmdel, NJ, USA
Volume
16
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
388
Lastpage
390
Abstract
A triggerable semiconductor laser emits light in very short (0.1 ns) intense (0.1 W) pulses with a few nanosecond periods when biased a fraction of a milliampere above a threshold current. Single uniform lightwave pulses can be triggered by fractional milliampere current pulses up to several nanoseconds in duration. This behavior was first seen in computer simulations of devices with a high electron-trap density (other causes are possible). Devices exhibiting this behavior have been found among the population of AlGaAs stripe lasers made by deep proton bombardment. A simple lightwave pulse regenerator has been built by adding a photodiode with less than unity gain. This circuit emits lightwave pulses with 6 pJ energy, less than 0.2 ns in duration, and with an amplitude that is up to 15 times larger than the input pulse.
Keywords
Gallium materials/lasers; Optical pulse generation; Photodiodes; Piezoelectric transducers; Pulsed lasers; Cathodes; Charge carrier processes; Electron traps; Helium; Laser transitions; Optical pulses; Pulse amplifiers; Pump lasers; Semiconductor lasers; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070497
Filename
1070497
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