• DocumentCode
    1081850
  • Title

    VB-3 In0.47Ga0.53As FETs with insulator-assisted Schottky gates

  • Author

    O´Connor, P. ; Pearsall, T.P. ; Cheng, K.Y. ; Cho, Andrew Y. ; Hwang, James C. M. ; Alavi, K.

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1697
  • Lastpage
    1697
  • Keywords
    Capacitance-voltage characteristics; Electrons; Epitaxial layers; FETs; Gallium arsenide; Indium phosphide; Insulation; Leakage current; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20992
  • Filename
    1482489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081850