DocumentCode
1082194
Title
Optical spot-size converters for low-loss coupling between fibers and optoelectronic semiconductor devices
Author
Mitomi, Osamu ; Kasaya, Kazuo ; Tohmori, Yuichi ; Suzaki, Yasumasa ; Fukano, Hideki ; Sakai, Yoshihisa ; Okamoto, Minoru ; Matsumoto, Shin ichi
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
14
Issue
7
fYear
1996
fDate
7/1/1996 12:00:00 AM
Firstpage
1714
Lastpage
1720
Abstract
Structures of spot size converters that allow low loss and easy coupling between an optical semiconductor device and a fiber are proposed and designed theoretically. These spot-size converters have a tapered small core for expanding the mode field. They also have a double cladding region which consists of an n+-doped InP substrate as the outer cladding and a p-doped or nondoped InP layer as the inner cladding with a ridge structure. This double cladding utilizes the plasma effect of a carrier which makes the refractive index of highly doped n-InP lower than that of p-doped or nondoped InP. The double-cladding structure can tightly confine an expanded mode field in the inner cladding, and results in low radiation loss at the tapered waveguide, in addition, this structure reforms the mode field shape into a Gaussian-like shape and achieves a low loss coupling of less than 1 dB with a large misalignment tolerance for fiber coupling. These spot-size converters are easily fabricated and applicable to all types of optical semiconductor devices
Keywords
III-V semiconductors; claddings; indium compounds; integrated optics; optical couplers; optical elements; optical fibre couplers; optical losses; refractive index; semiconductor devices; semiconductor plasma; substrates; 1 dB; Gaussian-like shape; InP; double cladding region; expanded mode field; highly doped n-InP; inner cladding; low radiation loss; low-loss coupling; mode field expansion; mode field shape; n+-doped InP substrate; nondoped InP layer; optical fiber coupling; optical semiconductor device; optical spot-size converters; optoelectronic semiconductor devices; outer cladding; p-doped; plasma effect; refractive index; ridge structure; tapered small core; tapered waveguide; Indium phosphide; Optical coupling; Optical devices; Optical fiber devices; Optical fiber losses; Optical refraction; Optical variables control; Optical waveguides; Plasma confinement; Semiconductor devices;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.507949
Filename
507949
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