• DocumentCode
    1082210
  • Title

    Polymer-based cantilevers with integrated electrodes

  • Author

    Mouaziz, Schahrazede ; Boero, Giovanni ; Popovic, Radivoje S. ; Brugger, Jürgen

  • Author_Institution
    Microsystems Lab., Ecole Polytech. Fed. de Lausanne
  • Volume
    15
  • Issue
    4
  • fYear
    2006
  • Firstpage
    890
  • Lastpage
    895
  • Abstract
    An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-mum-thick photo-structured layer for the cantilever, and a 200-mum-thick layer for the chip body. The releasing method is based on dry etching of a 2-mum-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-mum-long and 100-mum-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2times2 mum2 Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of cong1 N/m and a resonance frequency of cong17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200Omega, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 muT/Hz1/2 at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications
  • Keywords
    Hall effect devices; cantilevers; electrodes; etching; internal stresses; microsensors; polymers; 100 to 500 micron; 2 to 10 micron; 200 muohm; Hall sensor; SU-8 cantilever; SU-8 polymer; dry etching; integrated electrodes; magnetic field measurements; magnetic flux density; polysilicon sacrificial layer; residual stress reduction; scanning magnetic field sensing; Bismuth; Dry etching; Electrodes; Fabrication; Geometry; Polymers; Residual stresses; Temperature sensors; Testing; Titanium; Dry etch; Hall sensor; SU-8 cantilever; integrated electrodes; polysilicon sacrificial layer; stress-reducing geometries; thin film metal deposition and lift off;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2006.879376
  • Filename
    1668185