DocumentCode
1082615
Title
Measurement of MOSFET constants
Author
De La Moneda, F.H. ; Kotecha, H.N. ; Shatzkes, M.
Author_Institution
IBM General Products Division, Tucson, AZ
Volume
3
Issue
1
fYear
1982
fDate
1/1/1982 12:00:00 AM
Firstpage
10
Lastpage
12
Abstract
A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.
Keywords
DRAM chips; Density measurement; Electric resistance; Electrical resistance measurement; Electron devices; Length measurement; MOSFET circuits; Random access memory; Semiconductor memory; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25456
Filename
1482561
Link To Document