DocumentCode
1082912
Title
The graded bandgap multilayer avalanche photodiode: A new low-noise detector
Author
Williams, G.F. ; Capasso, F. ; Tsang, W.T.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
3
Issue
3
fYear
1982
fDate
3/1/1982 12:00:00 AM
Firstpage
71
Lastpage
73
Abstract
We propose a new multistage avalanche photodiode for low-noise optical detection. In each stage, the ionization energy is provided by a heterointerface conduction-band step. Thus, ideally, only electrons cause ionization, and the device mimics a photomultiplier. This detector has intrinsically lower noise and lower operating voltage than conventional avalanche detectors. Designs for 1.3 µm fiber optic systems are presented and possible realizations using molecular beam epitaxy discussed.
Keywords
Avalanche photodiodes; Electron optics; Ionization; Nonhomogeneous media; Optical design; Optical detectors; Optical noise; Photomultipliers; Photonic band gap; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25483
Filename
1482588
Link To Document