• DocumentCode
    1082912
  • Title

    The graded bandgap multilayer avalanche photodiode: A new low-noise detector

  • Author

    Williams, G.F. ; Capasso, F. ; Tsang, W.T.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    3
  • Issue
    3
  • fYear
    1982
  • fDate
    3/1/1982 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    73
  • Abstract
    We propose a new multistage avalanche photodiode for low-noise optical detection. In each stage, the ionization energy is provided by a heterointerface conduction-band step. Thus, ideally, only electrons cause ionization, and the device mimics a photomultiplier. This detector has intrinsically lower noise and lower operating voltage than conventional avalanche detectors. Designs for 1.3 µm fiber optic systems are presented and possible realizations using molecular beam epitaxy discussed.
  • Keywords
    Avalanche photodiodes; Electron optics; Ionization; Nonhomogeneous media; Optical design; Optical detectors; Optical noise; Photomultipliers; Photonic band gap; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25483
  • Filename
    1482588