• DocumentCode
    1082985
  • Title

    Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperatures

  • Author

    Elabd, H. ; Villani, T. ; Kosonocky, W.

  • Author_Institution
    RCA Laboratories, Princeton, NJ
  • Volume
    3
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    A new 32 × 63 element palladium-silicide Schottky-barrier IR-CCD device is described. The device can be operated from 40 to 140K and is sensitive in the 1.0 to 3.5 µm SWIR spectral range. A typical value of the quantum efficiency coefficient is 19.1%/eV. The photoelectric barrier height is 0.34 eV.
  • Keywords
    Charge coupled devices; Current measurement; Dark current; Detectors; Optical imaging; Registers; Schottky barriers; Sensor arrays; Space technology; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25490
  • Filename
    1482595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082985