• DocumentCode
    1083038
  • Title

    Electron transport in avalanching GaAs diodes

  • Author

    Lanyon, H.P.D.

  • Volume
    3
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    101
  • Lastpage
    102
  • Abstract
    Magnetoresistance measurements on avalanching GaAs diodes lead to an estimate of 1.6 × 10-15sec for the scattering time of avalanching electrons at 300K. This is consistent with the time recently calculated by Monte Carlo techniques. It confirms that impact ionization by electrons in GaAs is initiated by carriers that make several collisions in the process rather than by ballistic carriers which impact ionize without any interaction with phonons.
  • Keywords
    Electrons; Gallium arsenide; Magnetic field measurement; Magnetoresistance; Monte Carlo methods; Scattering; Schottky diodes; Temperature; Time measurement; Uncertainty;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25495
  • Filename
    1482600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083038