Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Based on the active line concept, a novel approach for the calculation of the high frequency noise performance of field effect transistors (FET) is proposed. By using a simple analytical theory, the FET small signal equivalent circuit as well as the macroscopic noise sources and their correlation are calculated for different two-port terminations. Values of the usual dimensionless noise parameters P, R, C, gate noise temperature T_g and drain noise temperature T _d are then given and discussed. By comparison with a more realistic numerical modeling of the noise performance, the validity of the analytical noise model is discussed. The validity of Pospieszalski´s noise model and its relations with Pucel´s one is emphasized