• DocumentCode
    1083425
  • Title

    Carrier transit time through a base with dopant dependent mobility

  • Author

    Rosenfeld, David ; Alterovitz, Samuel A.

  • Author_Institution
    Fac. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    41
  • Issue
    5
  • fYear
    1994
  • fDate
    5/1/1994 12:00:00 AM
  • Firstpage
    848
  • Lastpage
    849
  • Abstract
    The transit time through a base with exponential grading of dopant density is modeled and calculated. The dependence of the mobility on dopant concentration (and hence the spatial dependence) is taken into account and an analytical solution is derived
  • Keywords
    bipolar transistors; carrier mobility; impurity distribution; semiconductor device models; analytical solution; bipolar transistors; carrier transit time; dopant concentration; dopant dependent mobility; exponential grading; spatial dependence; Aluminum; Bipolar transistors; Doping profiles; Frequency estimation; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium; Semiconductor process modeling; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.285042
  • Filename
    285042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083425