A novel low-power static GaAs MESFET logic gate

A novel GaAs MESFET logic gate is described. The gate uses depletion mode FET´s and is a static one. It is about 30% faster and consumes about 30% of the power of the BFL gate. Ring oscillator circuits have been fabricated using one embodiment of the gate. For unity fan-out, an average propagation delay of 58.7 ps with a power dissipation of 18.8 mW has been achieved.