• DocumentCode
    1083767
  • Title

    The lateral punch-through transistor

  • Author

    Wilamowski, B.M. ; Jaeger, R.C.

  • Author_Institution
    Auburn University, Auburn, AL
  • Volume
    3
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    277
  • Lastpage
    280
  • Abstract
    Operation of a diffused-gate, lateral punch through transistor has been demonstrated. Operation is similar to the static induction transistor, and the device can be used in planar integrated circuits. Current flow in this lateral device obeys the space charge limited conduction law over a wide range of currents, and the drain current exhibits a negative temperature coefficient.
  • Keywords
    Conductivity; Electric breakdown; Frequency; Marine vehicles; Negative feedback; Poisson equations; Space charge; Temperature distribution; Thermal resistance; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25568
  • Filename
    1482673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083767