Advanced CD Control Technology for 65-nm Node Dual Damascene Process

Author

Nagase, Masatoshi ; Maruyama, Takuya ; Sekine, Makoto

Author_Institution

NEC Electron. Corp., Kanagawa

Volume

20

Issue

3

fYear

2007

Firstpage

245

Lastpage

251

Abstract

This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.

Keywords

coating techniques; dielectric materials; etching; integrated circuit interconnections; process control; Cu - Element; SiOC - System; advanced critical dimension control technology; deposition enhanced shrink etching process; dual damascene process; low-k interconnects; porous chemical-vapor deposition; size 40 nm; size 65 nm; trench etching; CMOS technology; Chemical technology; Costs; Dielectric materials; Etching; Integrated circuit interconnections; Lithography; Resists; Robustness; Semiconductor devices; Critical dimension (CD); dual damascene; etching; feedforward technology; low-k; shrink technology;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2007.901842

Filename

4285833